Very-large-scale integration (VLSI) Design is
the subject that is being taught by every technical university all around the
world on graduate or post graduate level. CMOS fabrication process is
a very important and essential part of VLSI Design and students must
understand this process.The well-established CMOS fabrication
technology, requires both n-channel (nMOS) and p-channel (pMOS) transistors to
be built on the same chip substrate. Special regions of semiconductor type
opposite to the substrate type must be created to accommodate
both nMOS and pMOS transistors. These regions are called
wells or tubs. A p-well is created in an n-type substrate or, alternatively, an
n- well is created in a p-type substrate. In the simple
n-well CMOS fabrication technology presented,
the nMOS transistor is created in the p-type substrate, and
the pMOS transistor is created in the n-well, which is built-in into
the p-type substrate. In the twin-tub CMOS technology, additional
tubs of the same type as the substrate can also be created for device
optimisation. Find the link below for simplified process sequence for the
fabrication of CMOS integrated circuits.
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